Ph.D., Electrical Engineering, Georgia Institute of Technology, Atlanta, GA, 2009
M.Sc., Electrical Engineering, University of Alberta, Edmonton, Alberta, Canada, 2004
B.Sc., Electrical Engineering, Isfahan University of Technology, Isfahan, Iran, 1999
- Texas Instrument Women’s Leadership Fellowship (2007-2008)
- Delta Kappa Gamma World Fellowship (2002-2004)
- Alberta Ingenuity Fund Scholarship (2003-2004)
- Alberta Informatics Circle of Research Excellence (iCORE) Scholarship (2003-2004)
Functional Brain Imaging, Brain Connectivity, Diffuse Optical Brain Imaging, Electroencephalography, Cognitive Rehabilitation, Circuit Design and Microelectronics, Ultra Low-Power Circuits for Biomedical Applications, Data Converters, System on Chip, Wireless IC Design
Selected Journal Publications
F. Amyot, T. Zimmermann, J. Riley, J. Kainerstorfer, V. Chernomordik, E. Mooshagian, L. Najafizadeh, F. Krueger, A. H. Gandjbakhche, and E. Wassermann, “A Functional Near Infrared Spectroscopy Normative Database for the Judgment of Complexity Task,” NeuroImage, 28;60(2), pp. 879-883, Jan. 2012.
J.Kainerstorfer, J. Riley, M. Ehler, L. Najafizadeh, F. Amyot, M. Hassan, R. Pursley, S. Demos, V. Chernomordik, M. Pircher, C. Hitzenberger, and A.H. Gandjbakhche, “Quantitative Principal Component Model for Skin Chromophore Mapping Using Multi Spectral Images and Spatial Priors,” Biomedical Optics Express, Vol. 2, Issue 5, pp. 1040-1058, May 2011.
K.A. Moen, L. Najafizadeh, J. Seungwoo, A. Raman, M. Turowski, and J.D. Cressler, “Accurate Modeling of Single Event Transients in a SiGe Voltage Reference Circuit,” IEEE Transactions on Nuclear Science,vol. 58, pp. 877-884 , Mar. 2011.
S. Seth, L. Najafizadeh, J.D.Cressler, ”On the RF Properties of Weakly-Saturated SiGe HBTs and Their Potential Use in Ultra-Low-Voltage Circuits,” IEEE Electron Device Letters, vol. 32, pp. 3-5, January 2011.
S.D. Phillips, K.A. Moen, L. Najafizadeh, R.M. Diestelhorst, A.K. Sutton, J.D. Cressler, G.Vizkelethy, P.E. Dodd, and P.W. Marshall,“A Comprehensive Understanding of the Efficacy of N-Ring SEE Hardening Methodologies in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 57,pp. 3400-3406, Dec. 2010.
L. Najafizadeh, S. D. Phillips, K. A. Moen, R. M. Diestelhorst, M. Bellini, P. K. Saha, J. D. Cressler, G. Vizkelethy, M. Turowski, A. Raman, and P. W. Marshall, “Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-signal Circuits,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3469-3476, Dec. 2009.
L. Najafizadeh, J. Adams, S. D. Phillips, K. Moen, J. D. Cressler, S. Aslam, T. Stevenson, and B. Meloy “Sub-1K Operation of SiGe Transistors and Circuits,” IEEE Electron Device Letters, vol. 30, pp. 508-510, May 2009.
L. Najafizadeh, T. Vo, S. D. Phillips, P. Cheng, E. P. Wilcox, J. D. Cressler, M. Mojarradi, and P. W. Marshall, “The Effects of Proton Irradiation on the Performance of High-Voltage nMOSFETs Implemented in a Low-Voltage SiGe BiCMOS Platform,” IEEE Transactions on Nuclear Science, vol. 55, pp. 3253-3258, Dec. 2008.
L. Najafizadeh, A. K. Sutton, R. Diestelhorst, M. Bellini, B. Jun, J. D. Cressler, P. W. Marshall, and C. J. Marshall, “A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2238-2244, Dec. 2007.
J. P. Comeau, L. Najafizadeh, J. M. Andrews, A.P. G. Prakash, and J. D. Cressler, “An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator,” IEEE Microwave and Wireless Components Letters, vol. 17, pp. 349-351, Jan. 2007.
L. Najafizadeh, M. Bellini, A. P. Gnana Prakash, G. Espinel, J. D. Cressler, P. W. Marshall, and C. J. Marshall, “Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3210-3216, Dec. 2006.
L. Najafizadeh, and Chintha Tellambura, “BER Analysis of an Arbitrary Square/ Rectangular QAM for MRC Diversity with ICE in Generalized Ricean Fading Channels,” IEEE Transactions on Vehicular Technology, vol. 55, pp. 1239-1248, July 2006.