Welcome to the home page of SiCLAB. SiCLAB is a world leading university-based SiC device research lab in the United States. SiCLAB reported the world's first near 1,000V SiC Schottky diode in 1993. SiCLAB's mission is to develop the knowledge base and power electronic technologies for energy efficient systems with special focus on (i) enabling the revolution of the nation's inefficient electrical energy infrastructure and allowing   market-driven integration of green energy into biomimetically controlled electricity network, and (ii) providing super-efficient and compact power electronics (power ICs, high-temperature power modules and converters/inverters) for the ultimate ecovehicles. Other research efforts include SiC UV and EUV detectors, linear and 2D arrays and SiC single photon detectors. SiCLAB's research has been supported by funding of over $1M/yr in the past ten years  from DARPA, Army TARDEC, ONR, NRL, Air Force, NASA, NSF, DOT, United Silicon Carbide, Inc., and Sensors Unlimited, Inc.

SiC Properties
Areas of Research
Best Performing SiC Devices
Facility Fee Schedule
 Recent Graduates
Research Highlights

For further information, contact:
Jian H. Zhao
Dr. Jian H. Zhao
Fellow, IEEE
Professor and Director of SiCLAB
Department of Electrical and Computer Engineering
Rutgers University
94 Brett Road
Piscataway, NJ 08854
Phone: (732)445-5240
Fax: (732)445-2820
Email: jzhao@ece.rutgers.edu