Jian Zhao



Phone:(848) 445-5240
Office:CoRE 512


  • Ph.D. in Electrical and Computer Engineering,
    Carnegie Mellon University, 1988
  • M.S. in Physics, University of Toledo, 1985
  • B.S. in Physics, Amoy (Xiamen) University, China, 1982


  • IEEE Fellow, 2010 "for contributions to vertical silicon carbide devices and process technologies"
  • Co-Editor, Special Issue of IEEE Transactions on Electron Devices on SiC Devices and Technology, 2008.
  • Plenary Speaker, DARPA (ARPA) Tri-Annual Conference, Indianapolis, 1995.
  • National Science Foundation Initiation Award, 1990.
  • Henry Rutgers Research Fellow: 1988-90.

Research Interests

  • Silicon Carbide (SiC) Semiconductor Devices
  • High Efficiency Smart Power Integrated Circuits
  • SiC Sensors, UV and EUV Detectors
  • SiC Single Photon Detectors
  • High Temperature Packaging
  • SiC Power Limiters/Protector/Circuit Breakers
  • SiC Inverters/Converters

Selected Publications


  • Zhe Chuan Feng and Jian H Zhao, "Silicon Carbide: Materials, Processing and Devices", Taylor & Francis, 2003, 416 pages.
  • Christi Madsen and Jian H. Zhao, "Optical Filter Design and Analysis: A Signal Processing Approach", Wiley Interscience, 1999, 408 pages. Year 2000 Top 10 Best Seller on Amazon.com under Corning Fiber Optics Series.


Recent Journal Articles

  • Jun Hu, Xiaobin Xin, Jian H. Zhao, Brenda L. VanMil, Rachael Myers-Ward, Charles R. Eddy, Jr, and David Kurt Gaskill , “Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes”, IEEE Transactions on Nuclear Science, Vol. 58, issue 6, Dec. 2011, pp.3343-3347.
  • R. Radhakrishnan and J. H. Zhao “A 2-dimensional fully analytical model for design of high-voltage Junction Barrier Schottky (JBS) diodes”, Elsevier Solid State Electronics, vol. 63, issue 1, September 2011, p. 167.
  • R. Radhakrishnan and J. H. Zhao “Monolithic integration of a 4H-SiC Vertical JFET and JBS diode”, IEEE Electron Device Letters, vol. 32, issue 6, June 2011, p. 785.
  • Yongxi Zhang, Xiangyang Hu, Jian H. Zhao, Kuang Sheng, W. Roger Cannon, Xiaohui Wang, Leonid Fursin , "Rheology and thermal conductivity of diamond powder filled liquid epoxy encapsulants for electronic packaging", IEEE Trans. on Comp. and Packaging Tech., Vol. 32, No.4, December, 2009, pp.716-723.
  • J. Hu, X. Xin, P. Alexandov, J. H. Zhao, B. L. VanMil, D. K. Gaskill, "4H-SiC Single Photon Avalanche Diode for 280nm UV Applications", Materials Science Forum, Vols. 600-603 (2009) pp 1203-1206.
  • Yuzhu Li, Petre Alexandrov, Jian H. Zhao, "1.88-m cm2 1650-V Normally on 4H-SiC TI-VJFET" , IEEE Transactions on Electron Devices, Vol.55, No. 8, pp.1880-1886, August 2008
  • J. Hu, X. Xin, C. L. Joseph, X. Li, and J. H. Zhao, "1 16 Pt-4H-SiC Schottky Photodiode Array for Low-Level EUV and UV Spectroscopic detection," IEEE Photonics Technology Letters, Vol.20, No. 24, Dec. 15, 2008.
  • J. H. Zhao, K. Sheng, Y. Zhang, and M. Su, "Current status and future prospects of SiC power JFETs and ICs", IEICE Trans. Electronics. Vol. E39-C, No.7, 2008.
  • J. Wu, J. Hu, J. H. Zhao, X. Wang, X. Li, L. Fursin, and T. Burke, "Normally-off 4H-SiC trench-gate MOSFETs with high mobility," Solid State Electronics, Vol. 52, pp. 909-913, 2008
  • Yongxi Zhang, Kuang Sheng, Ming Su, Jian H. Zhao, " Development of 4H-SiC LJFET-Based Power IC", IEEE Transactions on Electron Devices, Vol.55, No. 8, pp.1934-1945, August 2008
  • Jianhui Zhang, Xueqing Li, Petre Alexandrov, Leonid Fursin, Xiaohui Wang, Jian H. Zhao, "Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors", IEEE Transactions on Electron Devices, Vol.55, No. 8, pp.1899-1906, August 2008