Accomplishments
(Note: VB2/Ron
is
the Figure of Merit (FOM). The higher the FOM, the better the device.)
Accomplishments
(Note: VB2/Ron
is
the Figure of Merit (FOM). The higher the FOM, the better the device.)
| Device | Drift Layer Doping
Concentration
(cm-3) |
Drift Layer Thickness
(um) |
Blocking Voltage
(kV) |
Specific On-Resistance
(mOhm-cm2) |
VB2/Ron
(MW/cm2) |
| JBS Diode
(4H) |
1.4 x 1015 | 45 | 5.96 | 24 | 1,480 |
| Schottky Diode
(4H) |
5.6 x 1014 | 115 | 10.8 | 97 | 1,202 |
| TI-VJFET
(4H, normally-on) |
7 x 1015 | 9.4 | 1.71 | 2.77 | 1,056 |
| TI-VJFET
(4H) |
4.9 x 1014 | 120 | 11 | 130 | 930 |
| TI-VJFET
(4H) |
7 x 1015 | 9.4 | 1.72 | 3.6 | 828 |
| MPS Diode
(4H) |
2 x 1015 | 30 | 4.28 | 25.6 | 717 |
| MPS Diode
(4H) |
6.6 x 1015 | 10.3 | 1.78 | 6.68 | 474 |
| Planar VJFET
(4H) |
1.9 x 1015 | 30 | 4.34 | 40 | 471 |
| Planar VJFET
(4H) |
5.7 x 1015 | 15 | 1.53 | 17.5 | 134 |
| Device | Drift Layer Doping
Concentration
(cm-3) |
Drift Layer Thickness
(um) |
Rating | Specific On-Resistance
(mOhm-cm2) |
| PiN (4H) | 1 x 1015 | 29 | 5kV-100A | 637A/cm2
@4.5V and 200C |
| GTO (4H) | 7.2 x 1015 | 7 | 810V | 1000A/cm2
@4.5V |
| Device | Drift Layer Doping
Concentration
(cm-3) |
Drift Layer Thickness
(um) |
Current Gain | Blocking Voltage
(V) |
Specific On-Resistance
(mOhm-cm2) |
VB2/Ron
(MW/cm2) |
| BJT (4H) | 7 x 1014 | 50 | 7 | 9,300 | 49 | 1,765 |
| BJT (4H) | 6.7 x 1015 | 12 | 8.8 | 1,836 | 4.7 | 717 |
| BJT (4H) | 7.3 x 1015 | 12 | 70 | 1600 | 5.1 | 502 |
| BJT (4H) | 8.5 x 1015 | 12 | 24.8 | 1750 | 12 | 255 |
| BJT (4H) | 8.5 x 1015 | 12 | 18.8 | 757 | 2.9 | 198 |
| Darlington
BJT (4H) |
8.5 x 1015 | 12 | 462 | 1570 | 16.7 | 148 |
| BJT (4H) | 6 x 1015 | 12 | 47 | 500 | 8.7 | 29 |
| Darlington
BJT (4H) |
6 x 1015 | 12 | 1517 | 500 | 12.9 | 19.4 |
| Device | Drift Layer Doping Con. (cm-3 ) | Drift Layer Thickness
(um) |
Cut-Off Frequency fT
(MHz) |
Blocking Voltage
(V) |
Specific On-Resistance
(mOhm-cm2) |
| SIT
(4H) |
2 x 1016 | 1.33 | >700 | 392.5 | 3.1 |
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