Publications

Books and Book Chapters
  1. Jian H. Zhao, K. Sheng, and R. C. Lebron-Velilla, Silicon carbide Schottky barrier diode in << SiC Materials and Devices, Vol-I>>, edited by Michael Shur, Sergey Rumyantsev, and Michael Levinshtein, published by World Scientific.
  2. Zhe Chuan Feng and Jian H Zhao, <<Silicon Carbide: Materials, Processing and Devices>> (Optoelectronic Properities of Semiconductors and Superlattices; vol. 20), Published in Great Britain by Taylor & Francis Group, 2003, 416 pages.
  3. Feng Yan and Jian H. Zhao, SiC avalanche breakdown and avalanche photodiodes, book chapter in <<Silicon Carbide: Materials, Processing and Devices>>, Editors: Z. C. Feng and J. H. Zhao, Published by Taylor & Francis, 2003.
  4. Christi Madsen and Jian H. Zhao, <<Optical Filter Design and Analysis: A Signal Processing Approach>>, Wiley Interscience. 1999. 408 pages. Year 2000 Top 10 Best Seller in Amazon.com under Corning Fiber Optics Series.
  5. Jian H. Zhao and Terry Burke, Photothyristor, 20 printed pages invited contribution to the<<Encyclopedia of Electrical and Electronics Engineering >> a total of 24 Vols published by John Wiley Sons, 1999.
  6. Jian H. Zhao, Theoretical and Experimental Study of Electromigration, Chapter 6, pp. 167-233, in Electromigration and Degradation of Solid State Devices, ed. by A. Christou. John Wiley Sons, New York, 1994.
  7. Pin F. Tang and Jian H. Zhao, MMIC Electromigration Methodology, chapter 7, pp. 273-314, in Reliability of Gallium Arsenide MMICs, ed. by A. Christou, John Wiley Sons, Chichester, UK, 1992.


 Selected Journal and Proceeding Papers

  1. Ming Su, Kuang Sheng, Yuzhu Li, Yongxi Zhang, Jian Wu, Jian H. Zhao, Jianhui Zhang, Larry X. Li, "430-V 12.4-mOhm-cm2 Normally off 4H-SiC Lateral JFET," IEEE Electron Device Letters, vol.27, pp. 834- 836, Oct. 2006.
  2. Jianhui Zhang, Petre Alexandrov, Terry Burke, and Jian H. Zhao, "4H-SiC Power Bipolar Junction Transistor with a Very Low Specific On-resistance of 2.9 mOhm-cm2," IEEE Electron Device Letters, Vol.27, pp.368-370, May, 2006.
  3. K. Sheng, L.C. Yu, J. Zhang and J.H. Zhao, "High temperature characterization of SiC BJTs for power switching applications," Solid-State Electronics, Vol. 50, pp.1073-1079, 2006.
  4. J. Zhang, J. Wu, P. Alexandrov, T. Burke, K. Sheng and J. H. Zhao, "1836 V, 4.7 mOhm-cm2 high power 4H-SiC bipolar junction transistor," Materials Science Forum, Vols.527-529, pp.1417-1420, 2006.
  5. Y. Li, P. Alexandrov, J. Zhang, L.X. Li, J.H. Zhao, "10 kV, 87mOhm-cm2 normally-off 4H-SiC vertical junction field-effect transistor," Materials Science Forum, Vols.527-529, pp.1187-1190, 2006.
  6. J.H. Zhao, J. Zhang, X. Li, and K. Sheng, "Effect of graded base doping on the gain of SiC BJT," International Semiconductor Device Research Symposium (ISDRS), IEEE conference proceeding, pp.398-399, Dec. 2005.
  7. K. Sheng, L.C. Yu, J. Zhang and J.H. Zhao, "High temperature characterization of SiC BJTs for power switching applications," International Semiconductor Device Research Symposium (ISDRS), IEEE conference proceeding, pp.168-169, Dec. 2005.
  8. J. Zhang, P. Alexandrov, J. H. Zhao, G. Khalil, and T. Burke, "4H-SiC bipolar junction transistors for ground vehicle applications," The 6th International All Electric Combat Vehicle (AECV) Conference, Bath, England, 6/13-16, 2005,
  9. Jianhui Zhang, Petre Alexandrov, Jian H. Zhao, Terry Burke, "1677 V, 5.7 mOhm-cm2 4H-SiC BJTs," IEEE Electron Device Letters, Vol. 26, pp. 188-190, 2005.
  10. Ming Su, Xiaobin Xin, Xueqing Li., Jian H. Zhao, "Demonstration of High-voltage 4H-SiC Bipolar RF Power Limiter," Materials Science Forum,Vols. 527-529, pp. 1371-1374, 2006,
  11. J. Hu, X. Xin, J. H. Zhao, F. Yan, B. Guan, J. Seely, and B. Kjornrattanawanich, "Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area," Opt. Lett. *31*, 1591-1593 (2006).
  12. Xiaobin Xin, Feng Yan, Tim W. Koeth, Charles Joseph, Jun Hu, Jian Wu, and Jian H. Zhao. "Demonstration of 4H-SiC Visible-Blind EUV and UV Detector with Large Detection Area," IEE Electronic Letters Electronics Letters 41, pp. 1192-1193, 2005.
  13. Feng Yan, Xiaobin Xin, Peter Alexandrov, Carl M. Stahle, B. Guan, and Jian H. Zhao, "Development of Ultra High Sensitivity UV Silicon Carbide Detectors," Materials Science Forum Vols. 527-529,  pp. 1461-1464, 2006.
  14. Xiaobin Xin, Feng Yan, Xiaoli Sun, Peter Alexandrove, Carl M. Stahle, Jun Hu, M. Matsumura, Xueqing Li; Maurice Weiner, Jian H. Zhao, "Demonstration of 4H-SiC UV single photon counting avalanche photodiode," Electronics Letters, v 41(4), pp. 212-214, 2005.
  15. Jian Wu, Leonid Fursin, Yuzhu Li, Petre Alexandrov, M Weiner and J H Zhao, "4.3 kV 4H-SiC merged PiN/Schottky diodes", Semicond.Sci.Technol. vol. 21, pp.987-991,  2006
  16. J. Wu, J. Hu, J. H. Zhao, X. Wang, X. Li, L. Fursin, and T. Burke, "High mobility 4H-SiC trenched gate MOSFETs", submitted to IEE Electornics Letters.
  17. Yongxi Zhang, Kuang Sheng, Ming Su, Jian H. Zhao, Petre Alexandrov, and Leonid Fursin, "1000V, 9.1mOhm-cm2 Normally-Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuits Application," submitted to IEEE EDL.
  18. Jian H. Zhao (Invited), "SiC Power Field-Effect Transistors," MRS Bulliten, Vol 30, pp.293-298, 2005.
  19. J.H. Zhao, P. Alexandrov, Y. Li, X. Li, K. Sheng and R. Lebron-Velilla, "Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs," Material Science Forum, Vols. 527-529, 2006, pp. 1191-1194.
  20. P. Sannuti, X.Li, F.Yan, K. Sheng and J.H.Zhao, "Channel Electron Mobility in 4H-SiC Lateral Junction Field Effect Transistors," International Journal of Solid-State Electronics, Volume 49, No. 12, pp. 1900-1904, 2005.
  21.  J.-S. Lai, H. Yu, J. Zhang, P. Alexandrov, Y. Li, J. H. Zhao, K. Sheng, and A. Hefner, 'Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits," Proceedings of Industry Applications Conference, Volume 1,  pp. 404  409, 2005.
  22.  X. Xin, F. Yan, T. W. Koeth, C. Joseph, J. Hu and J. H. Zhao, "Demonstration of 4H-SiC visible-blind EUV and UV detector with large detection area," IEE Electronics Lett. Vol. 41 (21), 2005, pp.1192-1193, 2005.
  23. J. H. Zhao, K. Sheng and R.C. Lebron-Velilla, (Invited paper), "Silicon Carbide Schottky Barrier Diode,"Journal of High Speed Electronics and Systems, Vol. 5, No.4, pp.821-866, 2005.
  24. X. Xin, F. Yan, X. Sun, P. Alexandrove, C. M. Stahle, J. Hu, M. Matsumura, X. Li, M. Weiner, and J. H. Zhao, "Demonstration of the first 4H-SiC UV single photon counting avalanche photodiode," IEE Electronics Lett. Vol 41(4), pp.212-214, 2005.
  25. Jianhui Zhang, Petre Alexandrov, and Jian H. Zhao, Terry Burke, "1677 V, 5.7 mOhm-cm2 4H-SiC Bipolar Junction Transistors,"IEEE EDL Vol.26 (3), pp.188-190,  2005.
  26. Yanbin Luo, Jianhui Zhang, Petre Alexandrov, Leonid Fursin, and Jian H. Zhao, "Fabrication and Characterization of High Current Gain (Beta=430) and High Power (23A-500V) 4H-SiC Hybrid Darlington Bipolar Transistor," IEEE Trans. Electronic Devices, Vol.51, No. 12, pp. 2211-2216, 2004.
  27. Jian H, Zhao, Kiyoshi, Tone, Xueqing, Li, Petre, Alexandrov, Leonid, Fursin Maurice, Weiner, "3.6 mOhm-cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications," IEE Proceedings: Circuits, Devices & Systems, Vol. 151 (3) pp231-237,  2004.
  28. Feng Yan, Xiaobin Xin, Shahid Aslam, Yuegang Zhao, David Franz, Jian H. Zhao and Maurice Weiner, "4H-SiC Photo Detectors With Large Area and Very High Specific Detectivity", IEEE Journal of Quantum Electronics, Vol. 40, No. 9, 2004.
  29. J.H. Zhao, P. Alexandrov, J. Zhang, X. Li, "Fabrication and Characterization of 11-kV Normally Off 4H-SiC Trenched-and-Implanted Vertical Junction FET," Electron Device Letters, IEEE, Vol: 25, Issue: 7, pp.474-476, 2004.
  30. J. Zhang, P. Alexandrov, and J. H. Zhao, "A 500V, Very High Current Gain (Beta=1517) 4H-SiC Bipolar Darlington Transistor," Materials Science Forum, Vol. 457-460, pp1165-1168, 2004.
  31. J. Zhang, P. Alexandrov, and J. H. Zhao, "High Power (500V-70A) and High Gain (44-47) 4H-SiC Bipolar Junction Transistors," Materials Science Forum, Vol. 457-460, pp1149-1152, 2004.
  32. Jian Wu, Leonid Fursin, Yuzhu Li, Petre Alexandrov and Jian H. Zhao, "4,308V, 20.9 mOhm-m2 4H-SiC MPS Diodes based on a 30um Drift Layer," Materials Science Forum, Vol. 457-460, pp1109-1112, 2004.
  33. Y. Li, L. Fursin, J. Wu, P. Alexandrov and J. H. Zhao. "2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching Using 4H-SiC MPS Free-Wheeling Diodes," Materials Science Forum, Vol. 457-460, pp.1097-1100, 2004.
  34. J. H. Zhao, J. Zhang, P. Alexandrov, and T. Burke, "A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain Beta>640 and Tested in a Half-bridge Inverter up to 20A at VBus=900V," Materials Science Forum, Vol. 457-460, pp1169-1172, 2004.
  35. J. Zhang, J. H. Zhao, P. Alexandrov, and T. Burke, "Demonstration of first 9.2 KV 4H-SiC bipolar junction transistor," IEE Electronics Letters, Vol. 40, No. 21, pp1381-1382, 2004.
  36. J. H. Zhao, J. Zhang, P. Alexandrov, X. Li, and T. Burke, "A High Voltage (1,750V) and High Current Gain (Beta= 24.8) 4H-SiC Bipolar Junction Transistor Using a Thin (12 um) Drift Layer," Materials Science Forum, Vol. 457-460, pp. 1173-1176, 2004.
  37. J.H. Zhao, K. Tone, X. Li, P. Alexandrov, L. Fursin, M. Weiner, "6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs," Materials Science Forum, Vol. 457-460, pp.1213-1216, 2004.
  38. L. Fursin, X. Li, J.H. Zhao, "1,530V, 17.5mOhm-cm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization," Materials Science Forum, Vol. 457-460, pp.1137-1140, 2004.
  39. J.H. Zhao, L. Fursin, P. Alexandrov, X. Li, M. Weiner, "4,340V, 40 mOhm-cm2 Normally-Off 4H-SiC VJFET," Materials Science Forum, Vol. 457-460, pp.1161-1164, 2004.
  40. J. H. Zhao, J. Zhang, Y. Luo, X. Hu, Y. Li, H. Yu, J. Lai, P. Alexandrov, L. Fursin, X. Li, J. Carter, and M. Weiner, "The First 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications," Materials Science Forum, Vol. 457-460, pp.1137-1140, 2004.
  41. X. Li, J.H. Zhao, "Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC," Materials Science Forum, Vol. 457-460, pp.1197-1200, 2004.
  42. J.H. Zhao, X. Li, K. Tone, P. Alexandrov, L. Fursin, J. Carter, M. Weiner, "High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications," Materials Science Forum, Vol. 457-460, pp.957-962, 2004.
  43. B. K.Ng, J.P.R. David, D.J. Massey, R.C. Tozer, G.J. Rees, F. Yan, J. H. Zhao, and M. Weiner, "Avalanche Multiplication and Breakdown in 4H-SiC Diodes," Materials Science Forum, Vol. 457-460, pp.1069-1072, 2004.
  44. Jian H, Zhao, Leonid, Fursin, Luhua, Jiao, Xueqing, Li, Terry, Burke, "Demonstration of 1789 V, 6.68 mOhm-cm2 4H-SiC merged-PiN-Schottky diodes," Electronics Letters, Vol. 40 (6) pp390-391, Mar 18/2004.
  45. Leonid, Fursin, Jian H, Zhao, Maurice, Weiner, "1530V, 16.8mOhm-cm2, 4H-SiC normally-off vertical junction field-effect transistor," Electronics Letters, Vol. 40 (4) pp270-271, Feb 19/2004.
  46. X. Li, Y. Luo, L. Fursin, J. H. Zhao, M. Pan, P. Alexandrov and M. Weiner, "On the temperature coefficient of 4H-SiC BJT current gain," Solid-State Electronics, Vol. 47, Issue 2, pp.233-239, 2003.
  47. K. Tone, J. H. Zhao, L. Fursin, P. Alexandrov, M. Weiner, "4H-SiC normally-off vertical junction field-effect transistor with high current density," IEEE Electron Device Letters, Vol. 24, Iss. 7, pp 463465, (2003).
  48. Alexandrov, P.; Zhang, J.; Li, X.; Zhao, J.H.; "Demonstration of first 10 kV, 130 mOhm-cm2 SiC TI-VJFET,"  Electronics Letters, Vol: 39, Issue: 25, 11 Dec. 2003 Pp. 1860 - 1861.
  49. Luo, Yanbin. Zhang, Jianhui. Alexandrov, Petre. Fursin, Leonid. Zhao, Jian H. Burke, Terry. "High Voltage (greater than 1 kV) and High Current Gain (32) 4H-SiC Power BJTs Using Al-Free Ohmic Contact to the Base," IEEE Electron Device Letters. Vol 24 n 11 pp. 695-697, November 2003.
  50. Ng, B.K.; David, J.P.R.; Tozer, R.C.; Rees, G.J.; Feng Yan; Zhao, J.H.; Weiner, M.; "Nonlocal effects in thin 4H-SiC UV avalanche photodiodes Electron Devices," IEEE Transactions on, Vol 50, Issue 8,  pp.1724  1732, Aug. 2003.
  51. Zhao, J.H.; Alexandrov, P.; Li, X.; "Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes,"Electron Device Letters, IEEE, Vol 24, Issue: 6,  pp. 402  404, June 2003.
  52. Jianhui Zhang, Yanbin Luo, Petre Alexandrov, Leonid Fursin, and Jian H. Zhao. "A High Current Gain 4H-SiC NPN Power Bipolar Junction Transistor," IEEE Electron Device Letters. Vol 24 n 5. p 327-329, May 2003.
  53. Zhao, Jian H. Tone, Kiyoshi. Alexandrov, Petre. Fursin, Leonid. Weiner, Maurice. "1710-V 2.77-mOhm-cm2 4H-SiC trenched and implanted vertical junction field-effect transistors," IEEE Electron Device Letters. v 24 n 2. p 81-83, February 2003.
  54. F. Yan, C. Qin, J. H. Zhao, M. Bush, G. Olsen, B. K. Ng, J. P. R. David, R. C. Tozer and M. Weiner. "Demonstration of 4H-SiC avalanche photodiodes linear array Solid-State Electronics," Volume 47, Issue 2, Pages 241-245, February 2003.
  55. P. Alexandrov, W. Wright, M. Pan, M. Weiner, L. Jiao and J. H. Zhao, " Demonstration of high voltage (600-1300 V), high current (10-140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes," Solid-State Electronics, Volume 47, Issue 2, Pages 263-269, February 2003.
  56. Zhao, J H. Tone, K. Zhang, J. Alexandrov, P. Fursin, L. Weiner, M. "Demonstration of a high performance 4H-SiC vertical junction field effect transistor without epitaxial regrowth," Electronics Letters. Vol 39 n 3 p 321-323, Feb 6 2003.
  57. Zhao, J H. Alexandrov, P. Fursin, L. Weiner, M. "Demonstration of first 1050 V, 21.7mOhm-cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel," Electronics Letters. v 39 n 1 pp. 151-152, Jan 9 2003.
  58. X. Li, Y. Luo, L. Fursin, J. H. Zhao, M. Pan, P. Alexandrov and M. Weiner, "On the Temperature Coefficient of 4H-SiC BJT Current Gain," Solid-State Electronics 47, pp.233-239 (2003).
  59. J. H. Zhao, X. Li, K. Tone, P. Alexandrov, M. Pan, and M. Weiner, "Design of a Novel Planar Normally-off Power VJFET in 4H-SiC," Solid-State Electronics 47, pp.377-384 (2003).
  60. Zhao, J H. Alexandrov, P. Fursin, L. Feng, Z C. Weiner, M. "High performance 1500 V 4H-SiC junction barrier Schottky diodes," Electronics Letters. v 38 n 22. p 1389-1390, Oct 24 2002.
  61. X. Li, Y. Luo, J. H. Zhao, P. Alexandrov, M. Pan, and M. Weiner, "On the Temperature Coefficient of 4H-SiC NPN Transistor Current Gain," Materials Science Forum, Vols.389-393, pp.1333-1336 (2002).
  62. X. Li, L. Fursin, J. H. Zhao, P. Alexandrov, M. Pan, M. Weiner, T. Burke, and G. Khalil, "A Novel, Planar 3000V Normally-Off Field Gated Bipolar Transistor in 4H-SiC,"  Materials Science Forum, Vols.389-393, pp.1345-1348 (2002).
  63. Z. C. Feng, F. Yan, W. Y. Chang, J. H. Zhao, and J. Lin, "Optical characterization of ion implanted 4H-SiC," Materials Science Forum, Vol 389-393 p647-650, 2002.
  64. F. Yan, Chao Qin, Jian H. Zhao, and Maurice Weiner, "A novel technology to forming a very low bevel angle edge termination," Materials Science Forum, Vol 389-393 p1305-1308, 2002.
  65. F. Yan, C. Qin, J. H. Zhao, M. Bush, G. Olsen, and M. Weiner, "Demonstration of 4H-SiC APD linear arrays," Materials Science Forum, Vol 389-393 p1431-1434, 2002.
  66. J H. Zhao, X. Li, K. Tone, P. Alexandrov, M. Pan, and M. Weiner, "A novel high-voltage normally-off 4H-SiC vertical JFET," Materials Science Forum Vol. 389-393, pp 1223-1226, (2002).
  67. W.Y. Chang, Z.C. Feng J. Lin F. Yan J. H. Zhao, "Surface and interface property of ion implanted 4H-Silicon Carbide," International Journal of Modern Physics B Vol 16 Nos 1and 2 pp.151-158 (2002).
  68. L.Varani J.C.Vaissiere E.Starikov P.Shiktorov V.Gruzinskis L.Reggiani J.H.Zhao, "Monte Carlo Calculation of THz generation in Nitrides", Phys. Stat. Sol. (a) Vol. 190 No1 p.247-256 2002.
  69. P. Alexandrov, B. Wright, M. Pan, M. Weiner, L. Fursin, and J. H. Zhao, "4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW," Silicon Carbide and Related Materials - 2001 pts, 1 & 2, Materials Science Forum Vol. 389-393, pp 1177-1180, (2002).
  70. Y. Luo, L. Fursin, J. H. Zhao, P. Alexandrov, B. Wright, and M. Weiner, "All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22A," Silicon Carbide and Related Materials - 2001 pts, 1 & 2, Materials Science Forum Vol. 389-393, pp 1325-1328, (2002).
  71. Ng, B.K.; Yan, F.; David, J.P.R.; Tozer, R.C.; Rees, G.J.; Qin, C.; Zhao, J.H.; "Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes," Photonics Technology Letters, IEEE, Vol 14, Issue: 9,  pp.1342  1344, Sep 2002.
  72. F.Yan, C.Qin, J.H.Zhao, M.Weiner, B.K.Ng, J.P.R.David, R.C.Tozer, "Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2 degrees positive bevel,"IEE, Electronics Letters, vol.38, no.7, 28 March 2002, pp.335-6.
  73. V. Gruzinskis, P.Shiktorov, E.Starikov, J.H.Zhao, "Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique," Semiconductor Science and Technology, vol.16, no.9, Sept. 2001, pp.798-805.
  74. Alexandrov, P.; Zhao, J.H.; Wright, W.; Pan, M.; Weiner, M.; "Inductively-loaded half-bridge inverter characterization of 4H-SiC merged PiN/Schottky diodes up to 230 A and 250C," Electronics Letters, Vol: 37, Issue: 20, 27 Sept. 2001 Pp. 1261 - 1262.
  75. E.Starikov, P.Shiktorov, V.Gruzinskis, L.Reggiani,L.Varani, J.C.Vissiere, J.H. Zhao. "Monte Carlo simulation of terahertz generation in nitrides," Journal of Physics-Condensed Matter, vol.13, no.32, 13 Aug. 2001, pp.7159-7168.
  76. Alexandrov, P.; Zhao, J.H.; Wright, W.; Pan, M.; Weiner, M.; "Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures," Electronics Letters, Vol: 37, Issue: 18, 30 Aug. 2001 Pp. 1139  1140.
  77. F.Yan, Y.Luo, J.H.Zhao, M.Bush, G.H.Olsen, M.Weiner, "4H-SiC avalanche photodiode with multistep junction extension termination," IEE, Electronics Letters, vol.37, no.17, 16 Aug. 2001, pp.1080-1081. Publisher: IEE, UK.
  78. Fursin, L.G.; Zhao, J.H.; Weiner, M.; "Nickel ohmic contacts to p and n-type 4H-SiC," Electronics Letters Vol: 37, Issue: 17, 16 Aug. 2001 Pp. 1092 - 1093.
  79. J. H. Zhao, Y.Li, M.Lange, M.Cohen, G.H.Olsen, "Utilising Zn segregation at InP/InGaAs interface for as-deposited ohmic contact formation for photonic and electronic device applications," IEE, Electronics Letters, vol.37, no.16, 2 Aug. 2001, pp.1048-1049.
  80. P. Alexandrov, J. H. Zhao, W. Wright, M. Pan, M. Weiner, "Inductively-loaded half-bridge inverter characterization of 4H-SiC merged PiN/Schottky diodes up to 230A and 250 degrees C," IEE, Electronics Letters, Vol. 37, Issue. 20, pp 1261-1262, (2001).
  81. X. Li, K. Tone, L. Fursin, J. H. zhao, T. Burke, P. Alexandrov, M. Pan and M. Weiner, "Multistep Junction Termination Extension for SiC Power Devices," Electronics Letters, Vol.37, No.6, pp.392-393 (2001).
  82. E. Starikov, P. Shiktorov, V. Gruzinskis,L. Reggiani, L. Vaissiere, and  Jian H. Zhao, "Monte Carlo simulation of THz maser  based on optical phonon transit-time resonance in GaN," IEEE Trans. Electron Devices, vol.48, no.3, March 2001, pp. 438-443.
  83. Y.M.Zhang Y.M.Zhang P.Alexandrov and J.H.Zhao, "Fabrication of 4H-SiC Merged PN-Schottky Diodes" Chinese Journal Of Semiconductors," Vol.22 No.3  pp. 265-270 Mar. 2001.
  84. E. Starikov P.Shiktorov V.Gruzinskis L.Reggiani L.Varani J.C.Vaissiere J.H.Zhao, "Monte Carlo simulation of the generation of terahertz radiation in GaN," J. Appl. Phys. Vol 89 No2    p.1161-1171 Jan. 2001.
  85. P. Alexandrov, K. Tone, Y. Luo, J. H. Zhao, T. Burke, M. Pan, M. Weiner, "High performance C plus Al co-implanted 5000V 4H-SiC P+iN diode," Electronics Letters, Vol. 37, Iss. 8, pp 531-533, (2001).
  86. W. Wright, J. Carter, P. Alexandrov, M. Pan, M. Weiner, J. H. Zhao, "Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor," Electronics Letters, Vol. 37, Iss. 12, pp 787-788, (2001).
  87. P. Alexandrov, J. H. Zhao, W. Wright, M. Pan, M. Weiner, "Demonstration of 140A, 800V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures," Electronics Letters, Vol. 37, Iss. 18, pp 1139-1140, (2001).
  88. X. Li, K. Tone, L. Cao, P. Alexandrov, L. Fursin and J. H. Zhao, "Theoretical and Experimental Study of 4H-SiC Junction Edge Termination," Silicon Carbide and Related Materials - 1999 pts, 1 & 2, Materials Science Forum Vol. 338-3, pp 1375-1378, (2000).
  89. L. Fursin, K. Tone, P. Alexandrov, Y. Luo, L. Cao, J. Zhao, M. Weiner, and M. Pan, "Fabrication and Characterization of 4H-SiC GTOs and Diodes," Silicon Carbide and Related Materials - 1999 pts, 1 & 2, Materials Science Forum Vol. 338-3, pp1399-1402, (2000).
  90. F. Yan, Jian H. Zhao, Greg Olsen, "Demonstration of the first 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector," Solid State Electronics, vol. 44(2), pp.341-346, 2000.
  91. Luo, Y. Fursin, L. Zhao, J H. "Demonstration of 4H-SiC power bipolar junction transistors," Electronics Letters. v 36 n 17 Aug 2000. p 1496-1497.
  92. Fursin, L. Tone, K. Alexandrov, P. Luo, Y. Cao, L. Zhao, J. Weiner, M. Pan, M. "Fabrication and characterization of 4H-SiC GTOs and diodes," Materials Science Forum. v 338 II 2000. p 1399-1402.
  93. J. H. Zhao, V. gruzinskis, M. Weiner, M. Pan, P. Shiktorov, and E. Starikov, ``Monte Carlo simulation of Gunn effect and microwave power generation at 240GHz in n$^{+}$-n$^{-}$nn$^{+}$ GaN structures,'' Materials Science Forum, Vol.338-342, pp.1635-1638, 2000.
  94. F. Yan, Y. Luo, J. H. Zhao, C. Dries, and G. Olsen, ``Demonstration of a high performance visible-blind avalanche photodiode,'' Materials Science Forum, Vol.338-342, pp.1383-1386, 2000.
  95. Z. C. Feng, S. J. Chua, Z. X. Shen, K. Tone, and J. H. Zhao, ``Microscopic probing of raman scattering and photoluminescence on C-Al ion co-implaned 6H-SiC," Materials Science Forum, Vol.338-342, pp.659-662, 2000.
  96. Y. Luo, F. Yan, K. Tone, J. H. Zhao, and J. Crofton, ``Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC,'' Materials Science Forum, Vol.338-342, pp.1013-1016, 2000.
  97. V. Gruzinskis, Y. Luo, J. H. Zhao, M. Weiner, M. Pan, P. Shiktorov, and E. Starikov,  ``Monte Carlo simulation of 4H-SiC IMPATT diodes,'' Materials Science Forum, Vol.338-342, pp.1379-1382, 2000.
  98. K. Tone, J. H. Zhao, M. Weiner, M. Pan, ``Fabrication and testing of 1,000V-60A 4H-SiC MPS diodes in an inductive half-bridge circuit,'' Materials Science Forum, Vol.338-342, pp.1187-1190, 2000.
  99. F. Yan, Jian H. Zhao, Greg Olsen, ``Demonstration of the first 4H-SiC avalanche photodiodes,'' Solid State Electronics, vol. 44(2), pp.341-346, 2000.
  100. F.Yan Y.Luo J.H.Zhao G.Olsen, "4H-SiC visible blind UV avalanche photodiode," IEE, Electronics Letter 35(11) pp. 929-930 2000.
  101. Z. C. Feng, S. J. Chua, K. Tone & J. H. Zhao, "Recrystallization of C-Al Ion Co-implanted Epitaxial 6H-SiC," Appl. Phys. Lett. 75, 472-474 (1999).
  102. Li, B.; Cao, L.; Zhao, J.H.; "High current density 800-V 4H-SiC gate turn-off thyristors," Electron Device Letters, IEEE, Vol 20, Issue 5, May 1999 pp. 219  222.
  103. Tone, K.; Zhao, J.H.; "A comparative study of C plus Al coimplantation and Al implantation in 4Hand 6H-SiC," Electron Devices, IEEE Transactions on, Vol 46, Issue 3, March 1999 pp. 612  619.
  104. Campi, J.; Yan Shi; Yanbin Luo; Feng Yan; Zhao, J.H.; "Study of interface state density and effective oxide charge in post-metallization annealed SiO2-SiC structures," Electron Devices, IEEE Transactions on, Vol: 46, Issue: 3, March 1999 Pp. 511 - 519.
  105. Y. Shi, Y. Luo, J. Campi, F. Yan; Y. K. Lee, J. Zhao,  "Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC," Electronics Letters, Vol. 34, No.7, 1998. Pp. 698 - 700.
  106.  Z.C. Feng, I. Ferguson, R.A. Stall, K. Li, Y. Shi, H. Singh, K. Tone, J.H. Zhao, A.T.S. Wee, K.L. Tan, F. Adar & B. Lenain, "Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques," Materials Science Forum 264-268, 693-696 (1998).
  107. L. Cao and J. Zhao, "Dry etching of 6H-SiC using inductively coupled plasma," J. of Electro-chemical Soc, Vol.145, No.10, pp.3609-3612, Oct. 1998.
  108. Koscica, T.E.; Zhao, J.H.; "Applications of multi-functional characteristics in GaAs/AlGaAs field effect real space transfer transistors," Electronics Letters, Vol: 34, Issue: 17, 20 Aug. 1998 Pp. 1696 - 1697.
  109. Y. Shi, Y. Luo, J. Campi, F. Yan, Y. K. Lee, and J. H. Zhao, "Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC," IEE Electronics Lett, Vo1.34 (7), pp.698-700, April 1998.
  110. R. Mickevicius and J. Zhao, "Monte Carlo study of electron transport in SiC," J. of Applied Physics, Vol. 83(6), pp.3161-3167, March 1998.
  111. Y. Shi, J. Zhao, J. Sarathy, G. Olsen, and H. Lee, "Resonant cavity enhanced heterojunction phototransistors based on InGaAsSb/AlGaAsSb grown by MBE,"  IEEE Photonics technl. Lett, Vol. 10, pp.258-260, 1998
  112. C.K. Madsen and J. H. Zhao, "Increasing the free spectral range of silica waveguide rings for filter applications," Optics Letters, Vo1.23 (3), 2/1/1998, pp.186-188.
  113. B. Li, L. Cao, and J. H. Zhao, "Evaluation of damage induced inductively-coupled plasma etching of 6H-SiC using Au Schottky barrier diodes," Appl. Phys. Lett, Vo1.73, No.5, pp.653- 655, August 3, 1998.
  114. Y. Shi, J. Zhao, J. Sarathy, G.H. Olsen, and H. Lee, "Tunable resonant cavity enhanced (RCE) photo detectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by MBE," Electronics Letters, Vo1.33, pp. 2248-2250, 1997.
  115. K. Tone, S. Weiner, and J. Zhao, "Carbon and aluminum co-implantation for p-type doping in 6H-SiC," IEE Electronics Lett, Vo1.33, pp.1904-1906, 1997.
  116. Y. Shi, J. Zhao, H. Lee, and G. Olsen, "Tunable photodetectors based on strained compensated GainAsSb/AIGaAsSb multiple quantum wells grown by molecular beam epitaxy," IEEE Trans. on Electron Devices, Vol. 44, pp.2167-2173, 1997.
  117. J. Zhao, K. Tone, S. Weiner, M. Caleca, H. Du, and S. Withrop, "Evaluation of ohmic contacts to P-type 6H-SiC created by C and Al co-implantation," IEEE Electron Device Lett, Vol l8, pp.375-377, 1997.
  118. C.K. Madsen and J.H. Zhao, "Post-fabrication optimization of an autoregressive planar Waveguide lattice filter," Applied Optics, Vol. 36(3), 1997, pp.642-647.
  119. Tone, K.; Weiner, S.R.; Zhao, J.H.; "Carbon and aluminium co-implantation for p-type doping in 6H-SiC," Electronics Letters, Vol: 33, Issue: 22, 23 Oct. 1997 pp. 1904 - 1906.