| Welcome to the home page of SiCLAB. SiCLAB is a world leading university-based SiC device research lab in the United States. SiCLAB reported the world's first near 1,000V SiC Schottky diode in 1993. SiCLAB's mission is to develop the knowledge base and power electronic technologies for energy efficient systems with special focus on (i) enabling the revolution of the nation's inefficient electrical energy infrastructure and allowing market-driven integration of green energy into biomimetically controlled electricity network, and (ii) providing super-efficient and compact power electronics (power ICs, high-temperature power modules and converters/inverters) for the ultimate ecovehicles. Other research efforts include SiC UV and EUV detectors, linear and 2D arrays and SiC single photon detectors. SiCLAB's research has been supported by funding of over $1M/yr in the past ten years from DARPA, Army TARDEC, ONR, NRL, Air Force, NASA, NSF, DOT, United Silicon Carbide, Inc., and Sensors Unlimited, Inc. |
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| For further information, contact: |
| Dr. Jian H. Zhao
Department of Electrical and Computer Engineering Rutgers University 94 Brett Road Piscataway, NJ 08854 Phone: (732)445-5240 Fax: (732)445-2820 |