Gaurav Saraf

                                                                                   
 
Department of Electrical and Computer Engineering
Rutgers, The State University of New Jersey
94 Brett Road
Piscataway, NJ 08854

Phone: +1 (732) 445-0677 (Office)
Fax: +1 (732) 445-2820
Email: gsaraf@rci.rutgers.edu



    I am currently a Ph.D. candidate at the Department of Electrical and Computer Engineering, in the ZnO research group, working with Prof. Yicheng Lu.

Job
Research
    My research involves growth and characterization of non-polar a-plane (11-20) ZnO, MgZnO thin films and their heterostructures. I also study detailed structural properties using tools such as XRD, FESEM, TEM, AFM etc. The growth of these films is carried out in a metalorganic chemical vapor deposition (MOCVD) chamber. Non-polar a-plane ZnO, MgZnO films and their heterostructures have in-plane anisotropic structural, optical, electrical and acoustic properties (along in-plane m-axis [1-100] and in-plane c-axis [0001]), thus it can be used for novel devices such as optical modulators etc. Furthermore, since a-plane is non-polar (i.e. has equal number of cations and anions on the surface) plane of ZnO, it avoids spontaneous and piezoelectric polarization fields, thus preventing spatial separation of electrons and holes in quantum confined devices. This renders a-plane non-polar ZnO based heterostructures and quantum wells to have higher quantum efficiency compared to commonly grown c-plane ZnO based devices.
    In-plane anisotropy of the properties is also observed in transport behavior. Thus thin film field effect transistors (FETs) developed with this orientation is shows different device characteristics for devices aligned along the in-plane m-axis and in-plane c-axis, which can used to sensing applications.

    I am also involved in several collaborative projects within the group as well as with researchers in other Universities and Companies. Some these projects include: ZnO-based Spintronics project, ZnO based Phosphors, ZnO-GaN based LEDs, ZnO and MgZnO film based Sensors etc.

Patents
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