Jian Zhao



Phone:(848) 445-5240
Office:CoRE 512
Website: http://www.ece.rutgers.edu/~jzhao


Ph.D., Electrical and Computer Engineering, Carnegie Mellon University, 1988

M.S., Physics, University of Toledo, 1985

B.S., Physics, Amoy (Xiamen) University, China, 1982


  • IEEE Fellow, 2010 "for contributions to vertical silicon carbide devices and process technologies"
  • Co-Editor, Special Issue of IEEE Transactions on Electron Devices on SiC Devices and Technology, 2008.
  • Plenary Speaker, DARPA (ARPA) Tri-Annual Conference, Indianapolis, 1995.
  • National Science Foundation Initiation Award, 1990.
  • Henry Rutgers Research Fellow: 1988-90.

Research Interests

  • Silicon Carbide (SiC) Semiconductor Devices
  • High Efficiency Smart Power Integrated Circuits
  • SiC Sensors, UV and EUV Detectors
  • SiC Single Photon Detectors
  • High Temperature Packaging
  • SiC Power Limiters/Protector/Circuit Breakers
  • SiC Inverters/Converters

Selected Publications

  1. Jun Hu, Xiaobin Xin, Jian H. Zhao, Brenda L. VanMil, Rachael Myers-Ward, Charles R. Eddy, Jr, and David Kurt Gaskill , “Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes”, IEEE Transactions on Nuclear Science, Vol. 58, issue 6, Dec. 2011, pp.3343-3347.
  2. R. Radhakrishnan and J. H. Zhao “A 2-dimensional fully analytical model for design of high-voltage Junction Barrier Schottky (JBS) diodes”, Elsevier Solid State Electronics, vol. 63, issue 1, September 2011, p. 167.
  3. R. Radhakrishnan and J. H. Zhao “Monolithic integration of a 4H-SiC Vertical JFET and JBS diode”, IEEE Electron Device Letters, vol. 32, issue 6, June 2011, p. 785.
  4. Yongxi Zhang, Xiangyang Hu, Jian H. Zhao, Kuang Sheng, W. Roger Cannon, Xiaohui Wang, Leonid Fursin , "Rheology and thermal conductivity of diamond powder filled liquid epoxy encapsulants for electronic packaging", IEEE Trans. on Comp. and Packaging Tech., Vol. 32, No.4, December, 2009, pp.716-723.
  5. J. Hu, X. Xin, P. Alexandov, J. H. Zhao, B. L. VanMil, D. K. Gaskill, "4H-SiC Single Photon Avalanche Diode for 280nm UV Applications", Materials Science Forum, Vols. 600-603 (2009) pp 1203-1206.
  6. Yuzhu Li, Petre Alexandrov, Jian H. Zhao, "1.88-m cm2 1650-V Normally on 4H-SiC TI-VJFET" , IEEE Transactions on Electron Devices, Vol.55, No. 8, pp.1880-1886, August 2008
  7. J. Hu, X. Xin, C. L. Joseph, X. Li, and J. H. Zhao, "1 16 Pt-4H-SiC Schottky Photodiode Array for Low-Level EUV and UV Spectroscopic detection," IEEE Photonics Technology Letters, Vol.20, No. 24, Dec. 15, 2008.
  8. J. H. Zhao, K. Sheng, Y. Zhang, and M. Su, "Current status and future prospects of SiC power JFETs and ICs", IEICE Trans. Electronics. Vol. E39-C, No.7, 2008.
  9. J. Wu, J. Hu, J. H. Zhao, X. Wang, X. Li, L. Fursin, and T. Burke, "Normally-off 4H-SiC trench-gate MOSFETs with high mobility," Solid State Electronics, Vol. 52, pp. 909-913, 2008
  10. Yongxi Zhang, Kuang Sheng, Ming Su, Jian H. Zhao, " Development of 4H-SiC LJFET-Based Power IC", IEEE Transactions on Electron Devices, Vol.55, No. 8, pp.1934-1945, August 2008
  11. Jianhui Zhang, Xueqing Li, Petre Alexandrov, Leonid Fursin, Xiaohui Wang, Jian H. Zhao, "Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors", IEEE Transactions on Electron Devices, Vol.55, No. 8, pp.1899-1906, August 2008


  1. Zhe Chuan Feng and Jian H Zhao, "Silicon Carbide: Materials, Processing and Devices", Taylor & Francis, 2003, 416 pages.
  2. Christi Madsen and Jian H. Zhao, "Optical Filter Design and Analysis: A Signal Processing Approach", Wiley Interscience, 1999, 408 pages. Year 2000 Top 10 Best Seller on Amazon.com under Corning Fiber Optics Series.