Dr. Kin Cheung
Associate Professor,
Solid State Electronics

Education

Ph.D. in Physical Chemistry, New York University, 1983

 

Research Interests

Nanocrystal Arrays
Microwave Resonator using Micro-electro-mechanical Structures
Non-volatile Memory
Organic Electronics and Optics

 

Awards and Recognitions

Bell Laboratories President's Gold Award (1997)
Outstanding Achievement Award - 5th International Symposium on Plasma process Induced damage (2000)

 

Recent Journal Articles

K. P. Cheung, "Soft breakdown in thin gate oxide – a measurement artifact", Accepted for presentation in 2003 IRPS.
K. P. Cheung, “Initial gate leakage in ultra thin SiO2 – the role of a brief stress”, Accepted for presentation in 2003 P2ID.
K. P. Cheung, “Temperature effect on ultra thin SiO2 Time-Dependent-Dielectric-Breakdown”, Accepted for presentation in 2003 P2ID.
K. P. Cheung, "Plasma Charging Damage to Gate Dielectric - Past, Present and Future", Invited paper, Proc. 9th Int. Symp. Physical & Failure Analysis of IC, Singapore, July 2002, p237.
Luigi Pantisano, K. P. Cheung, " Origin of microwave noise from an n-channel metal–oxide–semiconductor field effect transistor", J. Appl. Phys. 92(11), 6679(2002).