14:332:465 COURSE SYLLABUS
Course No: 14:332:465 Course Title:- Physical Electronics
Prerequisites: 14:332:382 Corequisites: None
Date Prepared: July 15, 19977 Prepared by: J.H. Zhao
Catalog Description: 14:332:465 - Physical Electronics (3)
Prerequisites: 14:332:361 Corequisites: None
Semiconductor fundamentals, pn diodes, bipolar transistors, Schottky diodes, JFETS, MESFETs and
MOSFETs.
Typical Textbooks: E.S. Yang, Microelectronic Devices, McGraw Hill, 1988
Goals:Introduction to the physics of semiconductors and development of the basic equations governing semiconductor devices;
study of operation of important devices such as homojunction diodes, heterojunction and Schottky diodes, bipolar and field
effect transistors; development of insight useful for understanding new semiconductor devices and technologies.
Prerequisites by topic:
1. Basics of quantum mechanics
2. Ordinary differential equations
3. Static Electric Fields
Week-by-week Syllabus
Week 1: Crystal structure, Bohr's atom, Valence-bond model of solid and energy-band model of solid.
Week 2: Effective mass, intrinsic & extrinsic semiconductors, free carrier and carrier concentration and Femilevel.
Week 3: Scattering and drift, Mobility, Hall effect, excess carriers.
Week 4: Surface recombination, electrostatic field and potential built-in field, Quasi-Fermi level, basic governing equations.
Week 5: pn junction electrostatics, equilibrium and depletion approximation.
Week 6: Reverse bias transition capacitance, breakdown in pn junctions.
Week 7: Pn junction under forward bias, minority carrier injection, DC current-voltage characteristics, Temperature effect.
Week 8: Non-ideal diodes, tunneling diodes, a.c. Analysis, charge storage and transient characteristics.
Week 9: Bipolar transistors, derivation of I-V and current gain expressions, Equivalent circuits, Frequency response..
Week 10: Transistor as a switch, breakdown voltage, pnpn structures, Schottky barrier diodes, Image-force lowing effect.
Week 11: Schottky diodes vs. Pn diodes, Ohmic contacts, Schottky diode fabrication and applications. Heterojunctions.
Week 12: Theory of JFET, DC and AC characteristics, MESFET's. Enhance JFET and MESFETs. Ideal MOS structure.
Week 13: MOS capacitors, flatband and threshold voltages, Static MOS transistor.
Week 14: MOS transistor equivalent circuit, cutoff frequency, Body effect, MOS device fabrication.
Weeks 15 & 16: Final Exam
Computer usage: None
Laboratory projects (including major items of equipment and instrumentation used): None
Term paper required: None. Amount of Home-work required or suggested per week: 3 hours
ABET category content: Engineering Science: 3.0 credits Engineering Design: 0.0 credits